Specification:
MOSFET CHARACTERISTICS
To demonstrate the operation of a typical insulated gate FET.
To examine the relationship between the gate-to source voltage (VGS) the gate drain current (ID) and the drain-to source voltage (VDS) in an N-channel depletion mode IGFET.
To measure the corresponding VGS, ID, and VDS values and graphically plot those to form a set of drain characteristics values.
Price:
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EDUTEK INSTRUMENTATION
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